Research

A 1300 x 1300Å STM Scanning Tunnelling Microscopy image of an atom-thick Cu₂Si layer on a single crystal Si(111) surface. Following chlorine exposure and annealing at ~450°C  SiCl₂ and SiCl₄ desorption, together with large scale copper migration, has given rise to the fine scale roughness as well as larger (nanoscale) crystallites.  A chlorine coverage of ~0.5ML remains.  The associated research project centers on Cu catalyzed, Cl and CH₃ etching of Si, for large scale (CH₃)₂Cl₂Si (g) production.
The latter commercial process is essential in fabrication of all silicone materials.

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