BEGIN:VCALENDAR VERSION:2.0 PRODID:-//jEvents 2.0 for Joomla//EN CALSCALE:GREGORIAN METHOD:PUBLISH BEGIN:VEVENT UID:f92a89f88edcc24bdec78596718d72d3 CATEGORIES:Physical Chemistry Seminar CREATED:20191002T194626 SUMMARY:Professor Richard Remsing LOCATION:CCB\, Room 1209 DESCRIPTION:Modeling Charge Cariers in Complex Molecular Systems\nInterfaces between se miconductors and soft, disordered materials like liquids are attracting int erest as functional components of nanoscale devices for catalysis, solar en ergy conversion, and flexible electronics. The performance of these devices is often dictated by the influence of the soft material on the behavior of the charge carriers within the semiconductor, in addition to any sources o f disorder (defects) present in the material. However, a detailed molecular -scale picture of the interplay among interfacial structure, charge carrier s, and defects is difficult to ascertain with current approaches. In this t alk, I will discuss ongoing work focused on modeling charge carrier dynamic s in complex molecular systems. I will first discuss a new approach for mod eling charge carriers in condensed phases and demonstrate its applicability to electron-hole pairs in solids. I will then discuss charge carrier trapp ing by defects in the two-dimensional semiconductor MoS2, screening of thes e defects by interfacial liquids, and implications for nanoelectronics and catalysis. I will close with a brief discussion of electronic dynamics of s olids that are relevant to understanding charge carrier dynamics, before co ncluding with a discussion off future areas of development.\n X-ALT-DESC;FMTTYPE=text/html:
Modeling Charge Cariers in Complex Mo lecular Systems
Interfaces between semicond uctors and soft, disordered materials like liquids are attracting interest as functional components of nanoscale devices for catalysis, solar energy c onversion, and flexible electronics. The performance of these devices is of ten dictated by the influence of the soft material on the behavior of the c harge carriers within the semiconductor, in addition to any sources of diso rder (defects) present in the material. However, a detailed molecular-scale picture of the interplay among interfacial structure, charge carriers, and defects is difficult to ascertain with current approaches. In this talk, I will discuss ongoing work focused on modeling charge carrier dynamics in c omplex molecular systems. I will first discuss a new approach for modeling charge carriers in condensed phases and demonstrate its applicability to el ectron-hole pairs in solids. I will then discuss charge carrier trapping by defects in the two-dimensional semiconductor MoS2, screening of these defe cts by interfacial liquids, and implications for nanoelectronics and cataly sis. I will close with a brief discussion of electronic dynamics of solids that are relevant to understanding charge carrier dynamics, before concludi ng with a discussion off future areas of development.
X-EXTRAINFO:Fall 2019 Physical Chemistry Series DTSTAMP:20240329T020814 DTSTART:20191004T173000 DTEND:20191004T183000 SEQUENCE:0 TRANSP:OPAQUE END:VEVENT END:VCALENDAR